200910094-3 adva nced power electronics corp. 1/5 AP40N03GP-HF-3 ?2012 advanced power electronics corp. usa www.a-powerusa.com n-channel enhancement-mode power mosfet dss ds(on) d description absolute maximum ratings thermal data a dvanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. the AP40N03GP-HF-3 is in the to-220 through-hole package which is g d s bv 30v fast switching performance r 17mw simple drive requirement low gate charge rohs-compliant , halogen-free i 40a used in commercial app plication s where a low pcb footprint or an attached heatsink is required. this device is well suited for low voltage applications such as dc/dc converters and high current dc switches . o rdering information AP40N03GP-HF-3 tb : in rohs-compliant halogen-free to-220, shipped in tubes (50pcs/tube) g d s to-220 (p) d (tab) symbol units v ds v v gs i d at t c =25 c i d at t c =10 0 c i dm p d at t c =25 c p d at t a =2 5 c w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 2.5 c /w rthj-a maximum thermal resistance, junction-ambient 62 c /w parameter rating drain-source voltage 3 0 gate-source voltage 20 v continuous drain current 40 a storage temperature range continuous drain current 30 a pulsed drain curren t 1 1 69 a total power dissipation 50 w -55 to 150 c total power dissipation 2 operating junction temperature range -55 to 150 c parameter
adva nced power electronics corp. 2/5 AP40N03GP-HF-3 ?2012 advanced power electronics corp. usa www.a-powerusa.com electrical specifications at t j =25c (unless otherwise specified) source-drain diode notes: this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 1. pulse width limited by maximum junction temperature. 2. pulse test symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v d bv dss /dt j breakdown voltage temperature coefficient reference to 25c, i d =1ma - 0.037 -v/c r ds(on) static drain-source on-resistance 2 v gs =10v, i d =20a - 14 17 mw v gs =4.5v, i d =16a - 20 23 mw v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =20a - 26 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =125 o c) v ds =24v,v gs =0v - - 250 ua i gss gate-source leakage v gs = 20v, v ds =0v - - 100 na q g total gate charge 2 i d =20a - 17 - nc q gs gate-source charge v ds =24v - 3 - nc q gd gate-drain ("miller") charge v gs =5v - 10 - nc t d(on) turn-on delay time 2 v ds =15v - 7.2 - ns t r rise time i d =20a - 60 - ns t d(off) turn-off delay time r g =3.3w , v gs =10v - 22.5 - ns t f fall time r d =0.75w -10- ns c iss input capacitance v gs =0v - 800 - pf c oss output capacitance v ds =25v - 380 - pf c rss reverse transfer capacitance f=1.0mhz - 133 - pf symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =1.3v - - 40 a i sm pulsed source current ( body diode ) 1 - - 169 a v sd forward on voltage 2 t j =25c, i s =40a, v gs =0v - - 1.3 v
adva nced power electronics corp. 3/5 AP40N03GP-HF-3 ?2012 advanced power electronics corp. usa www.a-powerusa.com fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalised bvdss fig 4. normalized on-resistance vs. junction temperature vs. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage vs. reverse diode junction temperature typical electrical characteristics 0 20 40 60 80 100 0.0 2.0 4.0 6.0 8.0 10.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 9.0v 8.0v 7.0v 6.0v 5.0v 4.0v v g =3.0v 0 40 80 120 160 200 0.0 2.0 4.0 6.0 8.0 10.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 9.0v 8.0v 7.0v 6.0v 5.0v 4.0v v g =3.0v 0.2 0.8 1.4 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =18a v g =10v 8 12 16 20 24 28 32 24681 0 v gs , gate-to-source voltage (v) r ds(on) (mw ) i d =18a t c =25c 1 10 100 0.2 0.4 0.6 0.8 1 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 1.0 1.2 1.4 1.6 1.8 2.0 -50 0 50 100 150 t j , junction temperature ( o c ) v gs(th) (v)
adva nced power electronics corp. 4/5 AP40N03GP-HF-3 ?2012 advanced power electronics corp. usa www.a-powerusa.com fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform typical electrical characteristics (cont.) 1 10 100 1000 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 4 8 12 16 0 4 8 12 16 20 24 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =18a v ds =16v v ds =20v v ds =24v 0 400 800 1200 1600 1 5 9 13 17 21 25 29 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 5v q gs q gd q g charge operation in this area limited by r ds(on)
adva nced power electronics corp. 5/5 AP40N03GP-HF-3 ?2012 advanced power electronics corp. usa www.a-powerusa.com package dimensions: to-220 marking information: product: ap40n03 gp = rohs-compliant halogen-free to-220 date/lot code (ywwsss) y: last digit of the year ww: work week sss: lot code sequence package code millimeters min nom max a 4.40 4.60 4.80 b 0.76 0.88 1.00 d 8.60 8.80 9.00 c 0.36 0.43 0.50 e 9.80 10.10 10.40 l4 14.70 15.00 15.30 l5 6.20 6.40 6.60 d1 c1 1.25 1.35 1.45 b1 1.17 1.32 1.47 l 13.25 13.75 14.25 e l1 2.60 2.75 2.89 f 3.71 3.84 3.96 e1 1. all dimensions are in millimeters. 2. dimensions do not include mold protrusions. 2.54 ref. 7.4 ref, symbols 5.10 ref. e1 b b1 e d l4 l1 a c1 c l 40n03gp ywwsss f l5 e d1
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